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描述
由其分销商提供的 STMicroelectronics STF25N80K5 的描述。
N-channel 800 V, 0.19 Ohm typ., 19.5 A MDmesh K5 Power MOSFET in TO-220FP package
STF25N80K5 N-channel MOSFET Transistor, 19.5 A, 800 V, 3-Pin TO-220FP
Trans MOSFET N-CH 800V 19.5A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 19.5A I(D), 800V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
40W(Tc) 30V 5V@ 100µA 40nC@ 10 V 1individualNChannel 800V 260mΩ@ 19.5A,10V 19.5A 1.6nF@100V TO-220FP Through hole mounting
MOSFET, N-CH, 800V, 19.5A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 19.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.19ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance260 mΩ
Drain to Source Voltage (Vds)800 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.6 nF
Max Operating Temperature150 °C
Max Power Dissipation40 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation40 W
Rds On Max260 mΩ
Rise Time13 ns
Turn-Off Delay Time60 ns
Turn-On Delay Time25 ns
Dimensions
Height16.4 mm
Length10.6 mm
Width4.6 mm