描述
由其分销商提供的 STMicroelectronics STF10P6F6 的描述。
P-channel -60 V, 0.13 Ohm typ., -10 A STripFET F6 Power MOSFET in TO-220FP package
20W(Tc) 20V 4V@ 250¦ÌA 6.4nC@ 10 V 1P 60V 160m¦¸@ 5A,10V 10A 340pF@48V TO-220FP 16.4mm
Trans MOSFET P-CH 60V 10A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 7.2A I(D), 60V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
Mosfet, P-Ch, -60V, -10A, 175Deg C, 20W; Transistor Polarity:P Channel; Continuous Drain Current Id:-10A; Drain Source Voltage Vds:-60V; On Resistance Rds(On):0.13Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V; Power Rohs Compliant: Yes |Stmicroelectronics STF10P6F6
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)7.2 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance160 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time3.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Operating Temperature175 °C
Max Power Dissipation20 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation20 W
Rds On Max160 mΩ
Rise Time5.3 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time64 ns