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描述
由其分销商提供的 STMicroelectronics STF100N10F7 的描述。
N-channel 100 V, 0.0068 Ohm typ., 80 A STripFET F7 Power MOSFET in TO-220FP package
STF100N10F7 N-CHANNEL MOSFET TRANSISTOR, 45 A, 100 V, 3-PIN TO-220FP
STMicroelectronics NChannel EnhancedMOSTube STripFET H7series, Vds=100 V, 45 A, TO-220FPencapsulation, Through hole mounting, 3Pin
MOSFET, N-CH, 100V, 45A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.369 nF
Max Operating Temperature175 °C
Max Power Dissipation30 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max8 mΩ
Resistance80 mΩ
Rise Time40 ns
Schedule B8541290080
Turn-Off Delay Time46 ns
Turn-On Delay Time27 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm