供应链
Country of OriginMorocco
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
VishayVS-FA40SA50LC
543W(Tc) 20V 4V@ 250¦ÌA 420nC@ 10 V 1N 500V 130m¦¸@ 23A,10V 40A 6.9nF@25V SOT-227
STMicroelectronicsSTE88N65M5
N-channel 650 V, 0.024 Ohm typ., 88 A MDmesh M5 Power MOSFET in a ISOTOP package
描述
由其分销商提供的 STMicroelectronics STE40NC60 的描述。
N-CHANNEL 600V 0.098 OHM 40A ISOTOP POWERMESH II MOSFET
MOSFET Transistor, N Channel, 40 A, 600 V, 0.135 ohm, 10 V
STE40NC60 N-CHANNEL MOSFET TRANSISTOR, 40 A, 600 V, 4-PIN ISOTOP
MOSFET, N SOT-227; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.135ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: -; Power Dissipation P
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountChassis Mount, Panel, Screw
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time26 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance11.1 nF
Isolation Voltage2500 Vrms
Max Operating Temperature150 °C
Max Power Dissipation460 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation460 W
Rds On Max130 mΩ
Resistance130 mΩ
Reverse Recovery Time685 ns
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time41 ns
Turn-On Delay Time49 ns
Voltage Rating (DC)600 V
Dimensions
Height9.1 mm
Length38.2 mm
Width25.5 mm