供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-10-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-05-15
LTD Date2012-11-15
相关零件
InfineonIRFR3709ZTRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 5.2Milliohms;ID 86A;D-Pak (TO-252AA);PD 79W
描述
由其分销商提供的 STMicroelectronics STD90N03L 的描述。
Trans MOSFET N-CH 30V 80A 3-Pin (2+Tab) DPAK T/R
80 A 30 V 0.0057 ohm N-CHANNEL Si POWER MOSFET
N-CHANNEL 30V - 0.005Y - 80A - DPAK/IPAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Power MOSFET Transistors POWER MOSFET
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.805 nF
Max Operating Temperature175 °C
Max Power Dissipation95 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation95 W
Rds On Max5.7 mΩ
Rise Time135 ns
Turn-Off Delay Time24 ns