供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
相关零件
STMicroelectronicsSTD6NK50ZT4
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
STMicroelectronicsSTD8NM60ND
Mosfet Transistor, N Channel, 7 A, 600 V, 0.59 Ohm, 10 V, 4 V Rohs Compliant: Yes
描述
由其分销商提供的 STMicroelectronics STD7N52K3 的描述。
N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET
N-Channel 525 V 0.85 Ohm Surface Mount SuperMesh III Power MosFet - TO-252-3
Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N CH, 525V, 6.2A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.72ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Powe
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6.3 A
Drain to Source Breakdown Voltage525 V
Drain to Source Resistance980 mΩ
Drain to Source Voltage (Vdss)525 V
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance737 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage525 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation90 W
Rds On Max850 mΩ
Resistance850 mΩ
Rise Time11 ns
Threshold Voltage3.75 V
Turn-Off Delay Time36 ns
Turn-On Delay Time13 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm