STMicroelectronics STD7N52DK3

Mosfet Transistor, N Channel, 6 A, 525 V, 0.95 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
FarnellSTD7N52DK301
1d
Microchip USASTD7N52DK31,2083500Tray
4h
Component Stockers USASTD7N52DK3353
1d
Win SourceWS-STD7N52DK35,00085
12h
Worldway ElectronicsSTD7N52DK320,6677Tape & Reel
11h

数据表和文档

下载 STMicroelectronics STD7N52DK3 的数据表和制造商文档。

IHS

Datasheet19 页7 年前

element14 APAC

TME

库存历史记录

3 个月趋势:
-100%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2021-01-10
LTD Date2021-07-10

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描述

由其分销商提供的 STMicroelectronics STD7N52DK3 的描述。

Mosfet Transistor, N Channel, 6 A, 525 V, 0.95 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
Newark
N-channel 525 V, 0.95 Ohm typ., 6 A SuperFREDmesh(TM) 3 Power MOSFET in DPAK package
STMicroelectronics
N-Channel 525 V 1.15 Ohm Surface Mount SuperFREDMesh III MosFet - TO-252-3
Future Electronics
525 V, 6 A, 0.95 OHM, N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
ComSIT Distribution GmbH
MOSFET, N CH, 525V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 525V; On Resistance Rds(on): 0.95ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power
Farnell

图片

TME
Farnell
Lanka Micro
Newark

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics