相关零件
STMicroelectronicsSTD70NS04ZL
Power MOSFET, N Channel, 33 V, 70 A, 10.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
STMicroelectronicsSTD75N3LLH6
N-channel 30 V, 0.0042 Ohm, 75 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
描述
由其分销商提供的 STMicroelectronics STD60NF3LLT4 的描述。
N-channel 30 V, 0.0075 Ohm typ., 60 A STripFET II Power MOSFET in a DPAK package
N-Channel 30 V 0.0095 Ohm Surface Mount STripFET II Power MosFet - TO-252-3
Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) DPAK T/R
Power MOSFET Transistors N-Ch 30 Volt 60 Amp
Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Ptd High Voltage |Stmicroelectronics STD60NF3LLT4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time36.5 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance2.21 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rds On Max9.5 mΩ
Resistance9.5 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time36.5 ns
Turn-On Delay Time22 ns
Voltage Rating (DC)30 V