价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STD60NF06T4 | 27,500 | 2500 | 5d | ||||||||
| Newark | STD60NF06T4 | 602 | 5 | Cut Tape | ||||||||
| Arrow Electronics | STD60NF06T4 | 12,500 | 2500 | |||||||||
| Verical | STD60NF06T4 | 12,500 | 2500 | |||||||||
| DigiKey | 497-6195-1-ND | 1,126 | 1 | Cut Tape |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-06
Lifecycle StatusProduction (Last Updated: 1 month ago)
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STMicroelectronicsSTD60NF55LT4
STD60NF55LT4 N-channel MOSFET Transistor, 60 A, 55 V, 3-Pin TO-252
描述
由其分销商提供的 STMicroelectronics STD60NF06T4 的描述。
N-CHANNEL 60 V - 0.014 OHM - 60 A DPAK STripFET II MOSFET
STD60NF06T4 N-CHANNEL MOSFET TRANSISTOR, 60 A, 60 V, 3-PIN DPAK
Power MOSFET, N Channel, 60 V, 60 A, 0.016 ohm, TO-252 (DPAK), Surface Mount
MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:60V; On Resistance Rds(on):0.014ohm;
Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Mosfet, N, D-Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:60A; Tensión Drenaje-Fuente Vds:60V; Resistencia De Activación Rds(On):14Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Stmicroelectronics STD60NF06T4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)60 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.81 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max16 mΩ
Resistance16 mΩ
Rise Time108 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height2.4 mm
Length6.6 mm