价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STD150N3LLH6 | 0 | 5 | Bulk | 8h | |||||||
| element14 APAC | STD150N3LLH6 | 0 | 1 | Cut Tape | 8h | |||||||
| Farnell | STD150N3LLH6 | 0 | 1 | Cut Tape | 19h | |||||||
| Microchip USA | STD150N3LLH6 | 367 | 3K | Tray | 11h | |||||||
| Win Source | WS-STD150N3LLH6 | 12,800 | 25 | 20h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
STMicroelectronicsSTD155N3H6
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
STMicroelectronicsSTD100N3LF3
N-channel 30 V, 0.0045 Ohm typ., 80 A STripFET(TM) II Power MOSFET in a DPAK package
STMicroelectronicsSTD70NS04ZL
Power MOSFET, N Channel, 33 V, 70 A, 10.5 Milliohms, TO-252 (DPAK), 3 Pins, Surface Mount
onsemiNTD85N02RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns
描述
由其分销商提供的 STMicroelectronics STD150N3LLH6 的描述。
N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET
STD150N3LLH6 N-CHANNEL MOSFET TRANSISTOR, 80 A, 30 V, 3-PIN TO-252
MOSFET, N-CH, 30V, 80A, 175DEG C, 110W; Available until stocks are exhausted
N-Channel 30 V 2.8 mO Surface Mount STripFET VI Power MosFet -TO-252
Power Field-Effect Transistor, 80A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time46 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.7 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs2.5 V
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max2.8 mΩ
Resistance2.8 mΩ
Rise Time18 ns
Schedule B8541290080
Turn-Off Delay Time75 ns
Turn-On Delay Time17 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm