供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-04-22
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2012-05-15
LTD Date2012-11-15
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描述
由其分销商提供的 STMicroelectronics STB200N6F3 的描述。
MOSFET N-Channel 60V 120A 3.6mΩ@60A,10V 330W(Tc) 20V 4V@250µA 100nC@10V 6.8nF@25V D2PAK SMD
N-channel 60 V, 3 mΩ, 120 A D²PAK, TO-220, I²PAK STripFET™2; Power MOSFET
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vds)60 V
Fall Time14 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.8 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape (CT)
Rds On Max3.6 mΩ
Rise Time75 ns
Turn-Off Delay Time86 ns
Turn-On Delay Time26 ns