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MOSFET N-CH 650V 11A D2PAK / N-Channel 650 V 11A (Tc) 63W (Tc) Surface Mount PG-TO263-3
描述
由其分销商提供的 STMicroelectronics STB10N65K3 的描述。
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package
Trans MOSFET N-CH 650V 10A 3-Pin D2PAK T/R
MOSFET N-CH 650V 0.75Ohm 10A Zener-protected
Power Field-Effect Transistor, 10A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Very low intrinsic capacitances
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1 Ω
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.18 nF
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max1 Ω
Rise Time14 ns
Turn-Off Delay Time44 ns
Turn-On Delay Time14.5 ns