供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-02-25
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2012-05-15
LTD Date2012-11-15
描述
由其分销商提供的 STMicroelectronics ST13003DN 的描述。
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 400V 1A 20000mW 3-Pin(3+Tab) SOT-32 Bag
1 A 400 V NPN Si POWER TRANSISTOR TO-126
Transistors, Power Bipolar, High Voltage
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage400 V
Collector Emitter Voltage (VCEO)400 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min5
Max Collector Current1 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation20 W
Schedule B8541290080