供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-07-02
Lifecycle StatusObsolete (Last Updated: 2 months ago)
描述
由其分销商提供的 STMicroelectronics SCTH90N65G2V-7 的描述。
Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ., TJ = 25 °C) in an H2PAK-7 package
Ciiva
Trans MOSFET N-CH SiC 650V 116A 8-Pin(7+Tab) H2PAK T/R
Power Field-Effect Transistor, 116A I(D), 650V, 0.024ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
SIC MOSFET, N-CH, 650V, 116A, H2PAK-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:116A; Drain Source Voltage Vds:650V; No. of Pins:7Pins; Rds(on) Test Voltage:18V; Power Dissipation:484W RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals7
Technical
Continuous Drain Current (ID)116 A
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)650 V
Max Operating Temperature175 °C
Max Power Dissipation484 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max24 mΩ