STMicroelectronics SCT012H90G3AG

Name: STMicroelectronics SCT012H90G3AG
Brand: STMicroelectronics
SKU: SCT012H90G3AG

Automotive-grade silicon carbide Power MOSFET 900 V, 12 m typ., 110 A in an HPAK-7 package

$ 13.4

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		SCT012H90G3AG	47	1	Cut Tape	21.190	16.740	14.760	14.760	14.760
DigiKey	3	497-SCT012H90G3AGCT-ND	697	1	Cut Tape	22.010	15.786	14.333	14.333	14.333
TME	2	SCT012H90G3AG	0	1		52.750	52.750	52.750	52.750	52.750	4h
Avnet		SCT012H90G3AG	0	1K					11.858	11.355	1d
Arrow Electronics		SCT012H90G3AG	0	1K					15.667	15.184

库存历史记录

3 个月趋势:

-7.88%

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供应链

Country of OriginItaly

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2022-09-29

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 STMicroelectronics SCT012H90G3AG 的描述。

Automotive-grade silicon carbide Power MOSFET 900 V, 12 m typ., 110 A in an HPAK-7 package

EBV Elektronik

SIC MOSFET, N-CHANNEL, 900V, 110A, H2PAK;

element14 APAC

Power Field-Effect Transistor, 110A I(D), 900V, 0.0158ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

IHS

SIC MOSFET, N-CH, 900V, 110A, H2PAK-7; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:110A; Drain Source Voltage Vds:900V; No. of Pins:7Pins; Rds(on) Test Voltage:18V; Power Dissipation:625W RoHS Compliant: Yes

Newark