描述
由其分销商提供的 STMicroelectronics PD85025C 的描述。
Transistor RF FET N-CH 40V 7A 945MHz 3-Pin Case M-243 Box
25W 13.6V 870MHz LDMOS in M243 ceramic package
UHF BAND Si N-CHANNEL RF POWER MOSFET
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Body MaterialCeramic
Case/PackageM
MountScrew
Number of Pins243
Number of Terminals2
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage40 V
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Frequency945 MHz
Gain15 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency1 GHz
Max Operating Temperature200 °C
Max Output Power30 W
Max Power Dissipation93 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Output Power10 W
PackagingBulk
Power Dissipation93 W
Test Current300 mA
Test Voltage13.6 V
Voltage Rating40 V