供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-12-05
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2022-06-14
LTD Date2022-12-14
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描述
由其分销商提供的 STMicroelectronics PD85004 的描述。
N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89
4W 13.6V 870MHz LDMOS in SOT89 plastic package
Rf Mosfet, N-Ch, 40V, Sot-89-3; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation Pd:6W; Operating Frequency Min:-; Operating Frequency Max:1Ghz; Rf Transistor Case:Sot-89; No. Of Pins:3Pins; Operating Rohs Compliant: Yes |Stmicroelectronics PD85004
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-89
MountSurface Mount
Number of Terminals3
Weight130.492855 mg
Technical
Continuous Drain Current (ID)2 A
Current Rating2 A
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Frequency870 MHz
Gain15 dB
Gate to Source Voltage (Vgs)15 V
Input Capacitance16 pF
Max Frequency1 GHz
Max Operating Temperature150 °C
Max Output Power5 W
Max Power Dissipation6 W
Min Breakdown Voltage40 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage13.6 V
Output Power4 W
PackagingTape and Reel
Power Dissipation6 W
Power Gain17 dB
Test Current50 mA
Test Voltage13.6 V
Voltage Rating40 V
Dimensions
Height1.6 mm
Length4.6 mm
Width2.6 mm