STMicroelectronics MD2001FX

Trans GP BJT NPN 700V 12A 58000mW 3-Pin(3+Tab) ISOWATT218FX Tube
$ 1.305
Production
数据表
制造商页面

价格与库存

查看所有价格优惠
分销商
SKU
最小
Pkg
批量定价
Future Electronics
MD2001FX
0
30
Tube
USD
1.010
0.935
0.905
Avnet
MD2001FX
0
600
1d
Arrow Electronics
MD2001FX
0
600
USD
1.247
1.247
Microchip USA
MD2001FX
1,222
600
Tube
USD
2.952
2.952
2d
Component Stockers USA
MD2001FX
10,976
USD
2.100
2.060
2.000
1.930
1.930
>1wk

数据表和文档

下载 STMicroelectronics MD2001FX 的数据表和制造商文档。

Newark

Datasheet11 页21 年前

Future Electronics

iiiC

库存历史记录

3 个月趋势:
-57.20%
Powered bySpectra logo

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics MD2001FX 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D
下载
下载 CAD 模型时，合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Lifecycle StatusProduction (Last Updated: 2 weeks ago)

相关零件

onsemiBUH150G
Trans GP BJT NPN 400V 15A 150000mW 3-Pin(3+Tab) TO-220AB Tube
详细信息
onsemiBUH100
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
详细信息
onsemiKSC5027OTU
TRANS NPN 800V 3A TO-220 / Trans GP BJT NPN 800V 3A 50000mW 3-Pin(3+Tab) TO-220 Tube
详细信息
onsemiKSC5504DTTU
Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Through Hole TO-220-3
详细信息
onsemiFJPF6806DTU
Bipolar (BJT) Transistor NPN 750V 6A 40W Through Hole TO-220F
详细信息
onsemiFJAF6920TU
Power Bipolar Transistor, 20A I(C), 1-Element, NPN
详细信息

描述

由其分销商提供的 STMicroelectronics MD2001FX 的描述。

Trans GP BJT NPN 700V 12A 58000mW 3-Pin(3+Tab) ISOWATT218FX Tube
Verical
High voltage NPN power transistor for standard definition CRT display
STMicroelectronics
Power Bipolar Transistor, 12A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Semicontronic
MD2001FX Series NPN 700 V 12 A Definition CRT Display Transistor - ISOWATT-218FX
Future Electronics
TRANSISTOR, NPN, 700V, 12A, ISOWATT218FX; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 700V; Transition Frequency ft: -; Power Dissipation Pd: 58W; DC Collector Current: ; Available until stocks are exhausted
Farnell
Power Bjt, Npn, 700V, 12A, Isowatt218; Transistor Polarity:Npn; Collector Emitter Voltage Max:700V; Continuous Collector Current:12A; Power Dissipation:58W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Stmicroelectronics MD2001FX
Newark

图片

Newark
Lanka Micro
iiiC
Future Electronics
element14 APAC

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics