数据表和文档
下载 STMicroelectronics IRF830 的数据表和制造商文档。
官方数据表2 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1988-06-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2005-12-27
描述
由其分销商提供的 STMicroelectronics IRF830 的描述。
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
100W(Tc) 20V 4V@ 250µA 30nC@ 10 V 1individualNChannel 500V 1.5Ω@ 2.7A,10V 2.7A 610pF@25V TO-220 Through hole mounting 9.15mm(height)
CAP CER 0.33UF 100V JB 1210
TRANS IRF830 N-CH FET TO220
MOSFETs RO 844-IRF830
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)4.5 A
Current Rating4.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vds)500 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance610 pF
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation100 W
Rds On Max1.5 Ω
Rise Time8 ns
Turn-On Delay Time11.5 ns
Voltage Rating (DC)500 V
合规
环境分类
China RoHSNon-Compliant
Lead FreeContains Lead
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant