供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2005-06-21
LTD Date2005-12-21
描述
由其分销商提供的 STMicroelectronics IRF520 的描述。
10A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Compliant Through Hole 8 ns Contains Lead 25 ns 270 mΩ TO-220 9.2 A
MOSFET N-CH 100V 10A TO220AB
Power Field-Effect Transistor, 10A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs N-Ch 100 Volt 10 Amp
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance270 mΩ
Drain to Source Voltage (Vds)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance460 pF
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max270 mΩ
Rise Time25 ns
Turn-Off Delay Time32 ns
Voltage Rating (DC)100 V