描述
由其分销商提供的 STMicroelectronics BDW93CFP 的描述。
Transistor Darlington NPN 100V 12A 3-Pin (3+Tab) TO-220FP Tube
Power Bipolar Transistor, 12A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
BDW93CFP NPN DARLINGTON TRANSISTOR, 15 A 100 V HFE:100, 3-PIN TO-220FP
Power Bipolar, NPN, 3V, 20mA, TO-220FP, Tube
STMicroelectronics SCT
BDW93CFP Series 100 V 12 A Complementary Silicon Power Darlington Transistor
Darlington Transistor, Npn, To-220Fp; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:33W; Dc Collector Current:12A; Rf Transistor Case:To-220Fp; No. Of Pins:3Pins; Dc Current Gain Hfe:1000Hfe Rohs Compliant: Yes |Stmicroelectronics BDW93CFP
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Weight2.299997 g
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)100 V
Current Rating12 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2.5 V
hFE Min100
Max Breakdown Voltage350 V
Max Collector Current12 A
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Operating Temperature0 °C
Number of Elements1
PolarityNPN
Power Dissipation33 W
Voltage Rating (DC)100 V
Dimensions
Height9.3 mm
Length10.4 mm
Width4.6 mm