新增内容: 采用我们全新改版的体验,更快找到合适的零件

了解更多

STMicroelectronics BD911

Transistor GP BJT NPN 100V 15A 3-Pin (3+Tab) TO-220 Tube
$ 0.423
Production

价格与库存

数据表和文档

下载 STMicroelectronics BD911 的数据表和制造商文档。

IHS

Datasheet4 页0 年前

SOS electronic

Newark

JRH Electronics

B+D Enterprises

库存历史记录

3 个月趋势:
-0.18%

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics BD911 符号、封装和 3D STEP 模型。

来源eCADmCAD文件
Component Search Engine
符号封装
3D
下载
SnapEDA
符号封装
3D
下载
Ultra Librarian
符号封装
下载
下载 CAD 模型时,合作伙伴网站将在新标签页中打开
从 Octopart 下载 CAD 模型,即表示您同意我们的条款和条件以及隐私政策

供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1989-06-01
Lifecycle StatusProduction (Last Updated: 1 week ago)

相关零件

onsemiTIP29CTU
TIP Series NPN 2 W 100 V 1 A Flange Mount Epitaxial Silicon Transistor-TO-220-3
onsemiBD239CTU
Transistor, bjt, npn,100V V(Br)Ceo,2A I(C),to-220Ab Rohs Compliant: Yes |Onsemi BD239CTU
onsemiBD239C
100V 30W 2A NPN TO-220-3 Bipolar Transistors - BJT ROHS
NXP SemiconductorsBUJ403A,127
Trans GP BJT NPN 550V 6A 100000mW 3-Pin(3+Tab) TO-220AB Rail
onsemiKSD363R
Bulk Through Hole NPN SINGLE Bipolar (BJT) Transistor 40 @ 1A 5V 6A 40W 10MHz
onsemiBD241BTU
Tube Through Hole NPN BD241 Bipolar (BJT) Transistor 1.2V @ 600mA 3A 3A 40W 80V

描述

由其分销商提供的 STMicroelectronics BD911 的描述。

Transistor GP BJT NPN 100V 15A 3-Pin (3+Tab) TO-220 Tube
Power Bipolar Transistor, 15A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN General Purpose
Power Bipolar, NPN, 4V, 500mA, TO-220, Tube
STMicroelectronics SCT
Bipolar Transistor; Collector Emitter Voltage, V(br)ceo:100V; DC Current Gain Min (hfe):15; Package/Case:3-TO-220AB; Collector Current @ hfe:5A; DC Collector Current:15A; Leaded Process Compatible:Yes; No. of Pins:3 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:90W; DC Collector Current:15A; DC Current Gain hFE:40; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Application Code:GP; Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:15A; Current Gain Hfe Max:250; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:15A; Current Ic hFE:500mA; Device Marking:BD911; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; Hfe Typ:40; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Pd:90W; Power Dissipation Ptot Max:90W; Termination Type:Through Hole; Voltage Vcbo:100V

制造商别名

STMicroelectronics 在全球拥有多个品牌,分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

零件编号别名

该零件可能有以下备用零件编号:

  • BD 911