供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-10
LTD Date2013-05-10
描述
由其分销商提供的 STMicroelectronics BD537 的描述。
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 80V 8A 3-Pin(3+Tab) TO-220 Tube
8 A 80 V NPN Si POWER TRANSISTOR TO-220AB
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 50W; DC Collector Current: 6A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
TRANSISTOR, NPN, TO-220; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:80V; Current Ic Continuous a Max:6A; Voltage, Vce Sat Max:0.8V; Power Dissipation:50W; Min Hfe:15; Case Style:TO-220; ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage800 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Gain Bandwidth Product12 MHz
hFE Min15
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation50 W
TerminationThrough Hole
Transition Frequency12 MHz
Voltage Rating (DC)80 V