描述
由其分销商提供的 STMicroelectronics BD438 的描述。
Single Bipolar Transistor, PNP, 45 V, 4 A, 36 W, SOT-32 (TO-126), 3 Pins, Through Hole
Bipolar junction transistor, PNP, -4 A, -45 ## Fehler ##, THT, TO-126, BD438
TRANS PNP 45V 4A SOT32 / Trans GP BJT PNP 45V 4A 36000mW 3-Pin(3+Tab) SOT-32 Tube
COMPLEMENTARY SILICON POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD43X Series 36 W 45 V PNP Complementary Silicon Power Transistor - SOT-32
BD438 PNP BIPOLAR TRANSISTOR, 4 A, 45 V, 3-PIN SOT-32
Bipolar Transistors - BJT PNP Medium Power
Power Transistor, SOT-23, PNP, 45V
TRANSISTOR, PNP TO-126; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 36W; DC Collector Current: 4A; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-1
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min40
Max Breakdown Voltage45 V
Max Collector Current4 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation36 W
Transition Frequency3 MHz
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm