供应链
Country of OriginIndia
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 STMicroelectronics BD437 的描述。
TRANS NPN 45V 4A SOT-32 / Trans GP BJT NPN 45V 4A 36000mW 3-Pin(3+Tab) SOT-32 Tube
COMPLEMENTARY SILICON POWER TRANSISTOR Power Bipolar Transistor, 4A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
600mV@ 200mA,2A NPN 36W 5V 100μA 45V 45V 4A SOT-32-3 Through hole mounting 10.8mm(height)
BD437 NPN BIPOLAR TRANSISTOR, 4 A, 45 V, 3-PIN SOT-32
NPN TRANSISTOR 45V 4A 36W TO126 RoHSconf
BD437 Series 45 V 2 A Flange Mount Complementary Silicon Power Transistor-SOT-32
; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:45V; Continuous Collector Current, Ic:4A; Collector Emitter Saturation Voltage, Vce(sat):0.6V; Power Dissipation, Pd:36W; DC Current Gain Min (hfe):40 ;RoHS Compliant: Yes
TRANSISTOR, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency Typ ft:3MHz; Power Dissipation Pd:36W; DC Collector Current:4A; DC Current Gain hFE:140; Transistor Case Style:TO-126; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:600mV; Continuous Collector Current Ic Max:4A; Current Ic Continuous a Max:4A; Current Ic hFE:2A; Device Marking:BD437; Full Power Rating Temperature:25°C; Gain Bandwidth ft Min:3MHz; Gain Bandwidth ft Typ:3MHz; Hfe Min:40; No. of Transistors:1; Package / Case:TO-126; Power Dissipation Pd:36W; Power Dissipation Ptot Max:36W; Termination Type:Through Hole; Voltage Vcbo:45V
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage600 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min40
Max Collector Current4 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation36 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation36 W
Schedule B8541290080
Transition Frequency3 MHz
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm