STMicroelectronics BD139-16

Name: STMicroelectronics BD139-16
Brand: STMicroelectronics
SKU: BD139-16

Single Bipolar Transistor, NPN, 80 V, 1.5 A, 12.5 W, SOT-32, 3 Pins, Through Hole

$ 0.153

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Future Electronics	3	BD139-16	11,850	200	Tube				0.110	0.106
Newark		BD139-16	24	1		0.639	0.289	0.254	0.173	0.124
Verical		BD139-16	494,249	72				0.176	0.111	0.074
Arrow Electronics		BD139-16	494,249	1		0.201	0.201	0.177	0.112	0.074
DigiKey		497-12750-5-ND	8,290	1	Tube	1.440	1.440	0.600	0.426	0.328

数据表和文档

下载 STMicroelectronics BD139-16 的数据表和制造商文档。

SOS electronic

Datasheet9 页20 年前

IHS

TME

库存历史记录

3 个月趋势:

+0.06%

Powered by

CAD 模型

从我们值得信赖的合作伙伴处下载 STMicroelectronics BD139-16 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
SnapEDA		3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginIndia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 STMicroelectronics BD139-16 的描述。

Single Bipolar Transistor, NPN, 80 V, 1.5 A, 12.5 W, SOT-32, 3 Pins, Through Hole

EBV Elektronik

Transistor: NPN; bipolar; 80V; 1.5A; 12.5W; -65+150 deg.C; THT; TO126

Maritex

Trans GP BJT NPN 80V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube

Verical

80V 12.5W 100@150mA,2V 1.5A NPN SOT-32-3 Bipolar (BJT) ROHS

EBEE

BD139 Series 80 V 1.5 A Through Hole NPN Epitaxial Planar Transistor - SOT-32

Future Electronics

Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin

Semicontronic

BD139-16 NPN BIPOLAR TRANSISTOR, 3 A, 80 V, 3-PIN SOT-32

RS (Formerly Allied Electronics)

TRANSISTOR, BJT, NPN, 80V, 1.5A, SOT-32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 100hFE; Tran

Farnell

Transistor, Npn, Sot-32; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:80V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:1.25W; Corriente De Colector Dc:1.5A; Ganancia De Corriente Dc Hfe:40 |Stmicroelectronics BD139-16

Newark