描述
由其分销商提供的 STMicroelectronics BD135 的描述。
Bipolar (BJT) Single Transistor, NPN, 45 V, TO-126, Through Hole
45V 12.5W 25@150mA,2V 1.5A NPN SOT-32-3 Bipolar (BJT) ROHS
45V 1.25W 1.5A NPN SOT-32 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 45V 1.5A 1250mW 3-Pin(3+Tab) SOT-32 Tube
BD135 Series NPN 45 V 1.5 A Complementary Low Voltage Transistor - SOT-32
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans Bjt Single, Npn, 45V, 1.5A; |Stmicroelectronics BD135
NPN/PNP EPITAXIAL SILICON POWER TRANSISTOR
STMicroelectronics NPNTransistor, SOT-32encapsulation, Through hole mounting, Maximum DC collector current3 A, maximum collector-emission voltage45 V
TRANSISTOR, NPN, TO-126; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: 1.5A; DC Current Gain hFE: 250hFE; Transistor Case Styl
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)45 V
Collector Emitter Breakdown Voltage45 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)45 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min25
Max Breakdown Voltage45 V
Max Collector Current1.5 A
Max Operating Temperature150 °C
Max Power Dissipation8 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation12.5 W
Schedule B8541290080
Transition Frequency250 MHz
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm