供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2017-10-23
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2026-02-15
LTD Date2026-08-15
描述
由其分销商提供的 STMicroelectronics A2C50S65M2 的描述。
Trans IGBT Module N-CH 650V 50A 208000mW 35-Pin ACEPACK-2 Frame
ACEPACK 2 converter inverter brake, 650 V, 50 A trench gate field-stop IGBT M series, soft diode and NTC
Ciiva
Igbt Module, 6 N-Ch, 650V, 50A; |Stmicroelectronics A2C50S65M2
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
IGBT MOD 650V 50A 208W ACEPACK 2
IC RESET CIRCUIT 4.50V SOT143-4
IGBT MODULE, 6 N-CH, 650V, 50A; Transistor Polarity: Six N Channel; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 650V; Transis
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals35
Technical
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current50 A
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-40 °C
Number of Elements7
Schedule B8541290080