描述
由其分销商提供的 STMicroelectronics A2C35S12M3-F 的描述。
Trans IGBT Module N-CH 1200V 35A 250000mW 15-Pin ACEPACK-2 Tray
ACEPACK™ 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC, Tray
STMicroelectronics SCT
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
IGBT, MODULE, N-CH, 1.2KV, 35A
IGBT MOD 1200V 35A 250W ACEPACK2
IGBT MODULE 1200V 35A ACEPACK 2
Power Module |Stmicroelectronics A2C35S12M3-F
IC SUPERVISOR 1 CHANNEL SOT143-4
IGBT, MODULE, N-CH, 1.2KV, 35A; Transistor Polarity: N Channel; DC Collector Current: 35A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals35
Technical
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current35 A
Forward Voltage2.95 V
Max Breakdown Voltage1.2 kV
Max Collector Current35 A
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Operating Temperature-40 °C
Number of Elements7
Power Dissipation250 W
Schedule B8541290080