供应链
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2018-02-19
Lifecycle StatusProduction (Last Updated: 9 months ago)
描述
由其分销商提供的 STMicroelectronics A1P50S65M2 的描述。
Trans IGBT Module N-CH 650V 50A 208000mW 22-Pin ACEPACK-1 Frame
Insulated Gate Bipolar Transistor, 50A I(C), 650V V(BR)CES, N-Channel
Transistor IGBT Module N-CH 650V 50A ±20V Screw
Avnet Japan
ACEPACK™ 2 converter inverter brake, 1200 V, 35 A, trench gate field‑stop M series IGBT with soft diode and NTC, Tray
STMicroelectronics SCT
IGBT MOD 650V 50A 208W ACEPACK 1
|Stmicroelectronics A1P50S65M2
IC SUPERVISOR 1 CHANNEL SOT143-4
IGBT MOD, NPN, 650V, 50A, 208W, MODULE; Transistor Polarity: NPN; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.95V; Power Dissipation Pd: 208W; Collector Emitter Voltage V(br)ceo: 650V; Transisto
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals22
Technical
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)650 V
Continuous Collector Current50 A
Forward Voltage1.85 V
Max Breakdown Voltage650 V
Max Collector Current50 A
Max Operating Temperature150 °C
Max Power Dissipation208 W
Min Operating Temperature-40 °C
Number of Elements6
PolarityNPN
Power Dissipation208 W