供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-08
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2023-03-20
LTD Date2023-09-20
描述
由其分销商提供的 STMicroelectronics 2STW200 的描述。
2STW200 Series 80V 25 A PNP Complementary Power Darlington Transistor - TO-247
Power Bipolar Transistor, 25A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-247, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 80V 25A 130000mW 3-Pin(3+Tab) TO-247 Tube
Power Bipolar, PNP, 3V, 40mA, TO-247, Tube
STMicroelectronics SCT
25 A 80 V PNP Si POWER TRANSISTOR TO-247
Transistors, Power Bipolar, Darlington
Power Bipolar |Stmicroelectronics 2STW200
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Terminals3
Weight6.500007 g
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1.75 V
Collector Emitter Voltage (VCEO)80 V
Continuous Collector Current25 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)1 V
hFE Min300
Max Collector Current25 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation130 W
Dimensions
Height24.45 mm