供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-06-19
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
LTB Date2014-09-02
LTD Date2015-03-05
描述
由其分销商提供的 STMicroelectronics 2STC5200 的描述。
High power NPN epitaxial planar bipolar transistor
Power Bipolar Transistor, 15A I(C), 230V V(BR)CEO, 1-Element, NPN, Silicon, TO-264AA, Plastic/Epoxy, 3 Pin
Trans GP BJT NPN 230V 15A 3-Pin TO-264 Tube
TRANSISTOR, NPN TO-264; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 230V; Transition Frequency ft: 30MHz; Power Dissipation Pd: 150W; DC Collector Current: 8A; DC Current Gain hFE: 80hFE; Transistor Case Styl
Transistor, Npn To-264; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:230V; Frecuencia De Transición Ft:30Mhz; Disipación De Potencia Pd:150W; Corriente De Colector Dc:8A; Ganancia De Corriente Dc Hfe:80 |Stmicroelectronics 2STC5200
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-264
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)230 V
Collector Emitter Breakdown Voltage230 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)230 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency30 MHz
Gain Bandwidth Product30 MHz
hFE Min35
Max Collector Current15 A
Max Frequency30 MHz
Max Operating Temperature150 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation150 W
Transition Frequency30 MHz
Dimensions
Height26.4 mm
Length20.2 mm
Width5.2 mm