供应链
Country of OriginIndia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-08
Lifecycle StatusProduction (Last Updated: 2 weeks ago)
描述
由其分销商提供的 STMicroelectronics 2SD882 的描述。
Bipolar Transistors (BJT); 2SD882; STMICROELECTRONICS; NPN; 30 V; 3 A; 3
Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
NPN TRANSISTOR 30V 3A SOT32 RoHSconf
STMicroelectronics NPNTransistor, SOT-32encapsulation, Through hole mounting, Maximum DC collector current3 A, maximum collector-emission voltage30 V
TRANSISTOR NPN MED PWR SOT32; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 12.5W; DC Collector Current: 3A; DC Current Gain hFE: 100hFE; Transistor C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)30 V
Current Rating3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Collector Current3 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation12.5 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation12.5 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height10.8 mm
Length7.8 mm
Width2.7 mm