供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-08-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2013-06-25
LTD Date2013-12-25
描述
由其分销商提供的 STMicroelectronics 2SB772 的描述。
TRANSISTOR, BIPOLAR, SI, PNP, POWER, SWITCH, VCEO -30V, IC -3A, PD 12.5W, SOT-32,HFE 30
PNP MEDIUM POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 30V 3A 3-Pin(3+Tab) SOT-32 Tube
Bipolar Transistor, Pnp, -30V; Transistor, Polaridad:Pnp; Tensión Colector Emisor V(Br)Ceo:-30V; Frecuencia De Transición Ft:100Mhz; Disipación De Potencia Pd:12.5W; Corriente De Colector Dc:-3A; Ganancia De Corriente Dc Hfe:100 |Stmicroelectronics 2SB772
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageSOT-32
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage-1.1 V
Collector Emitter Voltage (VCEO)30 V
Current Rating-3 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Collector Current3 A
Max Frequency100 MHz
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityPNP
Power Dissipation12.5 W
Transition Frequency100 MHz
Voltage Rating (DC)-30 V
Dimensions
Height11.05 mm
Length7.8 mm
Width2.9 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant