供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2013-05-03
LTD Date2013-11-02
描述
由其分销商提供的 STMicroelectronics 2N5415 的描述。
TRANSISTOR, BIPOLAR, SI, PNP, DRIVER, HIGH VOLTAGE, SWITCH, VCEO -200V, IC -1A, PD 10W
Small Signal Bipolar Transistor, 1A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Trans GP BJT PNP 200V 1A 3-Pin TO-39 Bag
PNP Transistor; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:200V; Collector Emitter Saturation Voltage, Vce(sat):2.5V; Power Dissipation, Pd:10W; Package/Case:TO-39; DC Collector Current:1A ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight226.796185 g
Technical
Collector Base Voltage (VCBO)200 V
Collector Emitter Breakdown Voltage200 V
Collector Emitter Saturation Voltage2.5 V
Collector Emitter Voltage (VCEO)200 V
Current200 mA
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)4 V
Frequency15 MHz
Gain Bandwidth Product15 MHz
hFE Min30
Max Collector Current1 A
Max Frequency15 MHz
Max Operating Temperature200 °C
Max Power Dissipation10 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation10 W
Transition Frequency15 MHz
Voltage300 V
Voltage Rating (DC)-200 V
Dimensions
Diameter9.4 mm
Height6.6 mm
Length9.4 mm
Width9.4 mm