描述
由其分销商提供的 STMicroelectronics 2N4033 的描述。
PNP TRANSISTOR; TO-39; -80VCE; -80VBE; -5VEB; -1A ICC; 0.8 W @ +45 C (AMBIENT )
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-39
Transistor GP BJT PNP 80V 1A 3-Pin TO-39
BIPOLAR TRANSISTOR, PNP, -80V; Transistor Polarity:PNP; Collector Emitter Voltage, V(br)ceo:-80V; Transition Frequency Typ, ft:500MHz; Power Dissipation, Pd:800mW; DC Collector Current:-1A; DC Current Gain Max (hfe):100 ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage-500 mV
Collector Emitter Voltage (VCEO)80 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency500 MHz
Gain Bandwidth Product500 MHz
hFE Min25
Max Collector Current1 A
Max Frequency500 MHz
Max Operating Temperature175 °C
Max Power Dissipation800 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation800 mW
Transition Frequency150 MHz
Voltage Rating (DC)-80 V
Dimensions
Height6.6 mm
Length9.4 mm
Width9.4 mm