供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1980-01-06
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2013-12-17
描述
由其分销商提供的 STMicroelectronics 2N3439 的描述。
Small Signal Bipolar Transistor, 1A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-39
TRANSISTOR, SILICON; NPN; 350VCE; 450VCB; 7VEB; 1A ICC; 0.5A IB; 10 W @25 C
2N3439 Series 350 V 1 W NPN Through Hole Silicon Transistor - TO-39
500mV@ 50mA,4mA NPN 800mW 7V 5μA 450V 350V 1A TO-39 Through hole mounting 9.4mm*9.4mm*6.6mm
NPN Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:350V; Collector Emitter Saturation Voltage, Vce(sat):0.5V; Power Dissipation, Pd:10W; DC Current Gain Min (hfe):30; Package/Case:TO-39 ;RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)300 V
Collector Emitter Breakdown Voltage350 V
Collector Emitter Saturation Voltage500 mV
Collector Emitter Voltage (VCEO)350 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)7 V
Frequency15 MHz
Gain Bandwidth Product15 MHz
hFE Min30
Max Collector Current1 A
Max Frequency15 MHz
Max Operating Temperature200 °C
Max Power Dissipation5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation10 W
Transition Frequency15 MHz
Voltage Rating (DC)450 V
Dimensions
Height6.6 mm
Length9.4 mm
Width9.4 mm