STARPOWER GD600HFY120P1S

Name: STARPOWER GD600HFY120P1S
Brand: STARPOWER
SKU: GD600HFY120P1S

Insulated Gate Bipolar Transistor, 951A I(C), 1200V V(BR)CES, N-Channel

$ 327.96

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU	Min
Newark	GD600HFY120P1S	1	350.42	346.61	327.96	327.96	327.96
Farnell	GD600HFY120P1S	1	293.32*	287.13*	287.13*	287.13*	287.13*	19h
element14 APAC	GD600HFY120P1S	1	326.28*	308.47*	308.47*	308.47*	308.47*	8h

数据表和文档

下载 STARPOWER GD600HFY120P1S 的数据表和制造商文档。

IHS

Datasheet10 页9 年前

库存历史记录

3 个月趋势:

-14.29%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

描述

由其分销商提供的 STARPOWER GD600HFY120P1S 的描述。

Insulated Gate Bipolar Transistor, 951A I(C), 1200V V(BR)CES, N-Channel

IHS

Starpower GD600HFY120P1S IGBTモジュール

RS APAC

TRANSISTOR, IGBT MODULE, 1.2KV, 951A;

Farnell

IGBT, HALF BRIDGE, 1.2KV, 951A, MODULE; Continuous Collector Current:951A; Collector Emitter Saturation Voltage:1.7V; Power Dissipation:3.1kW; Operating Temperature Max:150°C; IGBT Termination:Stud; Transistor Mounting:Panel RoHS Compliant: Yes

Newark