STARPOWER GD450HFY120C6S

Insulated Gate Bipolar Transistor, 698A I(C), 1200V V(BR)CES, N-Channel
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
IC Components Ltd.GD450HFY120C6S5,100
22h
YIC InternationalGD450HFY120C6S5,400
3h

数据表和文档

下载 STARPOWER GD450HFY120C6S 的数据表和制造商文档。

IHS

Datasheet10 页3 年前

库存历史记录

3 个月趋势:
-14.29%
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供应链

Export Control Classification Number (ECCN) CodeEAR99

描述

由其分销商提供的 STARPOWER GD450HFY120C6S 的描述。

Insulated Gate Bipolar Transistor, 698A I(C), 1200V V(BR)CES, N-Channel
IHS
Starpower GD450HFY120C6S IGBTモジュール
RS APAC
IGBT MOD, 1.2KV, 680A, 150DEG C, 2.173KW; Transistor Polarity: Dual N Channel; DC Collector Current: 680A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 2.173kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: Module; No. of Pins: 11Pins; Operating Temperature Max: 150°C; Product Range: -; SVHC: No SVHC (27-Jun-2018)
Farnell
Igbt Mod, 1.2Kv, 680A, 150Deg C, 2.173Kw; Continuous Collector Current:680A; Collector Emitter Saturation Voltage:2V; Power Dissipation:2.173Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Starpower GD450HFY120C6S
Newark

制造商别名

STARPOWER 在全球拥有多个品牌，分销商可将其用作替代名称。STARPOWER 也可称为以下名称：

  • STARPOWER SEMICONDUCTOR LTD
  • STARPOWER SEMICONDUCTOR
  • StarPower Europe AG