STARPOWER GD300HFY120C2S

Insulated Gate Bipolar Transistor, 444A I(C), 1200V V(BR)CES, N-Channel
$ 106.32

数据表和文档

下载 STARPOWER GD300HFY120C2S 的数据表和制造商文档。

IHS

Datasheet9 页3 年前

库存历史记录

3 个月趋势:
-40.00%

供应链

Export Control Classification Number (ECCN) CodeEAR99

描述

由其分销商提供的 STARPOWER GD300HFY120C2S 的描述。

Insulated Gate Bipolar Transistor, 444A I(C), 1200V V(BR)CES, N-Channel
晶体管, IGBT 模块, 1.2KV, 600A, 150度 C, 2.941KW;
Starpower GD300HFY120C2S IGBTモジュール
IGBT MOD, 1.2KV, 600A, 150DEG C, 2.941KW; Transistor Polarity: Dual N Channel; DC Collector Current: 600A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 2.941kW; Collector Emitter Voltage V(br)ceo: 1
Igbt Mod, 1.2Kv, 600A, 150Deg C, 2.941Kw; Continuous Collector Current:600A; Collector Emitter Saturation Voltage:2V; Power Dissipation:2.941Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Starpower GD300HFY120C2S

制造商别名

STARPOWER 在全球拥有多个品牌,分销商可将其用作替代名称。STARPOWER 也可称为以下名称:

  • STARPOWER SEMICONDUCTOR LTD
  • STARPOWER SEMICONDUCTOR
  • StarPower Europe AG