STARPOWER GD200HFY120C2S

Name: STARPOWER GD200HFY120C2S
Brand: STARPOWER
SKU: GD200HFY120C2S

Insulated Gate Bipolar Transistor, 309A I(C), 1200V V(BR)CES, N-Channel

$ 97.55

制造商页面数据表

价格与库存

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未经授权的库存分销商

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查看所有价格优惠

Distributor	SKU		Min
Newark	GD200HFY120C2S	3	1	108.65	104.23	101.99	97.550	97.550
Farnell	GD200HFY120C2S	0	1	98.041*	85.737*	84.383*	84.383*	84.383*	23h
element14 APAC	GD200HFY120C2S	0	1	109.11*	92.680*	88.286*	88.286*	88.286*	12h
IC Components Ltd.	GD200HFY120C2S	28,400		56.510	56.510	56.510	56.510	56.510	1d
YIC International	GD200HFY120C2S	28,300		56.280	56.280	56.280	56.280	56.280	4h

数据表和文档

下载 STARPOWER GD200HFY120C2S 的数据表和制造商文档。

IHS

Datasheet9 页9 年前

库存历史记录

3 个月趋势:

-32.14%

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Export Control Classification Number (ECCN) CodeEAR99

描述

由其分销商提供的 STARPOWER GD200HFY120C2S 的描述。

Insulated Gate Bipolar Transistor, 309A I(C), 1200V V(BR)CES, N-Channel

IHS

Starpower GD200HFY120C2S IGBTモジュール

RS APAC

IGBT MOD, 1.2KV, 309A, 150DEG C, 1.006KW; Transistor Polarity: Dual N Channel; DC Collector Current: 309A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 1.006kW; Collector Emitter Voltage V(br)ceo: 1

Farnell

Igbt Mod, 1.2Kv, 309A, 150Deg C, 1.006Kw; Continuous Collector Current:309A; Collector Emitter Saturation Voltage:2V; Power Dissipation:1.006Kw; Operating Temperature Max:150°C; Igbt Termination:Stud; Transistor Mounting:Panel Rohs Compliant: Yes |Starpower GD200HFY120C2S

Newark