Vishay SI9953DY

Transistor MOSFET Array Dual P-CH 20V 2.3A 8-Pin SOIC T/R
$ 2.86
Obsolete
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
CoreStaffST4131198311
19h
FarnellSI9953DY01
1d
Classic Components
2
SI9953DY58
16h
AztechSI9953DY882
20h
Voyager ComponentsSI9953DY-SILICONIX-N/A45
15h

数据表和文档

下载 Vishay SI9953DY 的数据表和制造商文档。

IHS

Datasheet5 页16 年前
Datasheet4 页26 年前
Datasheet4 页26 年前

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:
+0.00%
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供应链

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1993-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2004-07-31
LTD Date2004-10-30

描述

由其分销商提供的 Vishay SI9953DY 的描述。

Transistor MOSFET Array Dual P-CH 20V 2.3A 8-Pin SOIC T/R
Avnet
Dual P-Channel 20-V (D-S) MOSFET -55~+150℃ SO-8
ACDS
Power Field-Effect Transistor, 2.3A I(D), 20V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
IHS
2W 20V 6.7nC@ 10V 20V 250m¦¸@ 10V SOP 5mm*4mm*1.55mm
UnikeyIC
Obsolete - Use Si4947ADY-T1-E3
Vishay
MOSFET, DUAL PP SO-8; Transistor Polarity: Dual P Channel; Continuous Drain Current Id: 2.3A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.25ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Di
Farnell
MOSFET, DUAL PP SO-8; Transistor Polarity:P Channel; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Continuous Drain Current Id:2.3A; Drain Source Voltage Vds:20V; N-channel Gate Charge:6.7nC; No. of Transistors:2; On Resistance Rds(on):250mohm; On State Resistance @ Vgs = 4.5V:400mohm; On State resistance @ Vgs = 10V:250mohm; Package / Case:SO-8 (SOIC-8); Power Dissipation Pd:2W; Pulse Current Idm:10A; SMD Marking:SI9953DY; Termination Type:SMD; Voltage Vgs Rds on Measurement:4.5V
element14 APAC

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Entegreci
Component Sense

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  • VISHAY AMERICAS INC
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