PHOTOTRANSISTOR; Wavelength Typ: 860nm; Viewing Angle: -; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Stand; Available until stocks are exhausted
PHOTOTRANSISTOR; Transistor Type:Phototransistor; Half Angle:13°; Case Style:Radial; Sensitivity Nom @ mW/cm2:0.8mA@1mW/cm2; Current, Ic Typ:0.8mA; Time, Rise:3µs; Operating Temperature Range:-25°C to +85°C; External Depth:2.8mm; ;RoHS Compliant: Yes
PHOTOTRANSISTOR; Transistor Polarity:NPN; Wavelength Typ:860nm; Power Consumption:75mW; Transistor Case Style:Side Looking; No. of Pins:2; SVHC:No SVHC (15-Dec-2010); Collector Emitter Voltage Vces:0.4V; Continuous Collector Current Ic Max:3mA; Current Ic Typ:0.8mA; Dark Current:100nA; External Depth:2.8mm; External Length / Height:4.0mm; External Width:3mm; Fall Time tf:3.5µs; Half Angle:13°; Lead Diameter:0.4mm; Lead Length:17.5mm; Lead Spacing:2.54mm; Nom Sensitivity @ mW/cm²:800µmA @ 1mW / cm²; Operating Temperature Max:+85°C; Operating Temperature Min:-25°C; Operating Temperature Range:-25°C to +85°C; Package / Case:Radial; Peak Wavelength:860nm; Power Dissipation Pd:75mW; Power Dissipation Pd:75mW; Reverse Protection Voltage:6V; Rise Time:3µs; Storage Temperature Max:+85°C; Storage Temperature Min:-40°C; Termination Type:Radial Leaded; Transistor Type:Photo