Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time150 µs
Forward Current30 mA
Max Collector Current20 mA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Circuits1
Number of Elements1
Output ConfigurationPhototransistor
Power Dissipation100 mW
Response Time50 µs
Reverse Breakdown Voltage6 V
Rise Time150 µs
Sensing Distance1.0922 mm
Wavelength930 nm