价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 1855-1067-ND | 9,863 | 1 | Tube | ||||||||
| Mouser | 852-GP1S196HCZ0F | 5,874 | 1 | Tape & Reel | ||||||||
| Win Source | WS-GP1S196HCZ0F | 56,698 | 245 | 9h | ||||||||
| UnikeyIC | GP1S196HCZ0F | 19,587 | 1 | Tube | 1d | |||||||
| Worldway Electronics | GP1S196HCZ0F | 28,346 | 7 | Tube | 1d |
描述
由其分销商提供的 Sharp GP1S196HCZ0F 的描述。
950nm Through-Beam 1.1mm 50¦Ìs,50¦Ìs Phototransistor DIP-4 PCB, 3.1mm*2mm*2.7mm
Photointerrupter Transmissive 1.1mm Phototransistor 4-Pin Sleeve
DIP-4 Photointerrupters - Slot Type - Transistor Output ROHS
Transistor Output Slotted Switch, 1-Channel, 1.1mm Slot Width
Optoelectronic Switch VR=6V IC=20mA VF=1.2V IF=30mA
Channel Type Photoelectric Switch (Logic Output)
SENSOR OPT SLOT PHOTOTRAN PCB MT
SENSR OPTO SLOT 1.1MM TRANS THRU
PHOTOINTERRUPTER; No. of Channels:1; Output Type:Transistor; Input Current:30mA; Max Output Voltage:35V; Operating Temperature Range:-25°C to +85°C ;RoHS Compliant: Yes
制造商别名
Sharp 在全球拥有多个品牌，分销商可将其用作替代名称。Sharp 也可称为以下名称：
- SHARP/Socle Technology
- SHARP CORP
- SHARP CORPORATION
- SHARPELEC
- SHARP ELECTRONICS
- SHARP ELECTRONICS CORP
- Sharp Integrated Circuits
- Sharp Electronics Corporation Device Division(SECD)
- SHARP ELECTRONICS(EUROPE)GMBH
- Sharp Microelectronics
- SHARP ASIA
- Sharp Electronic Components
- SHARP ELECTRONICS CORPORATION
- JEL SYSTEM CO LTD
- Sharp DAT
- Socle Technology
- Socle Technology Corporation
- SHARP Devices Europe GmbH
- SHARP/OCIC
- SHARP ELECTRONI
- SHARP Datasheet
- SHARP/Socle
- SOCLE Technology
技术规格
Physical
Contact PlatingCopper, Tin
MountThrough Hole
Number of Pins4
Technical
Collector Emitter Breakdown Voltage35 V
Collector Emitter Voltage (VCEO)35 V
Dark Current100 nA
Fall Time50 µs
Forward Current30 mA
Input Current20 mA
Max Collector Current400 µA
Max Operating Temperature85 °C
Min Operating Temperature-25 °C
Number of Channels1
Number of Circuits1
Number of Elements1
Operating Supply Current20 mA
Output ConfigurationPhototransistor
Output TypePhototransistor
Output Voltage35 V
Power Dissipation100 mW
Response Time50 µs
Reverse Breakdown Voltage6 V
Rise Time50 µs
Sensing Distance1.0922 mm
Wavelength930 nm
Dimensions
Height3.1 mm
Length3.1 mm
Width2 mm