Semikron SKM75GB123D

IGBT halfbridge standard 1200(V) 75(A)

IGBT MODULE, DUAL; Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):3.2V; Power Dissipation Pd:400W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:SE

IGBT Module; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:75A; Collector Emitter Saturation Voltage, Vce(sat):3V; Package/Case:D61; Collector Emitter Voltage, V(br)ceo:1200V ;RoHS Compliant: Yes

not recommended for new design Features: MOS input(voltage controlled) Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (10 mm) and creepage distance (20 mm) Typical Applications: AC inverter drives UPS

IGBT MODULE, DUAL; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:75A; Voltage, Vce Sat Max:3.2V; Case Style:SEMITRANS 2; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:50A; Current Ic av:78A; Current, Icm Pulsed:150A; External Depth:34mm; External Length / Height:29.5mm; Fixing Centres:80mm; Fixing Hole Diameter:6.4mm; Power, Pd:400W; Power, Ptot:400W; Temperature, Current:25°C; Time, Rise:56ns; Transistors, No. of:2; Width, External:94mm