Semikron SKM22GD123D

IGBT MODULE Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

Igbt Module, 1.2Kv, 25A, Semitrans 6; Transistor Polarity:n Channel; Dc Collector Current:22A; Collector Emitter Saturation Voltage Vce(On):1.2Kv; Power Dissipation Pd:145W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Product Range:- Rohs Compliant: Yes

IGBT MODULE, 3-PHASE BRIDGE; Transistor Type:IGBT Module; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:25A; Voltage, Vce Sat Max:3V; Case Style:SEMITRANS 6; Termination Type:Screw; Collector-to-Emitter Breakdown Voltage:1200V; Current Ic Continuous b Max:15A; Current Ic av:25A; Current, Icm Pulsed:25A; External Depth:45mm; External Length / Height:24mm; Fixing Centres:82mm; Fixing Hole Diameter:2.5mm; Power, Pd:145W; Power, Ptot:145W; Temperature, Current:25°C; Time, Rise:35ns; Transistors, No. of:6; Width, External:105mm

not recommended for new design Features: MOS input (voltage controlled) N channel, homogeneous Si Low inductance case Very low tail current with low temperature dependence High short circuit capability, self limiting to 6 x I cnom Latch-up free Fast & soft inverse CAL diodes Isolated copper baseplate using DCB Direct Copper Bonding Technology Large clearance (9 mm) and creepage distances (13 mm) Typical Applications: Switched mode power supplies Three phase inverters for AC motor speed control General power switching applications Pulse frequencies also above 15 kHz