Semikron SKM150GM12T4G

Name: Semikron SKM150GM12T4G
Brand: Semikron
SKU: SKM150GM12T4G

Insulated Gate Bipolar Transistor, 229A I(C), 1200V V(BR)CES, N-Channel

$ 201.365

数据表

价格与库存

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Distributor	SKU		Min	Pkg
Newark	SKM150GM12T4G	0	12				217.18	217.18	217.18
RS (Formerly Allied Electronics)	SKM150GM12T4G	0	12	Bulk			193.99	185.55	185.55	10h
ATI ACCURATE TECHNOLOGY	SKM150GM12T4G-SEMIKRON	3			227.00	192.95	192.95	192.95	192.95	21h
IC Components Ltd.	SKM150GM12T4G	2,002			109.65	109.65	109.65	109.65	109.65	20h
Aztech	SKM150GM12T4G	524			6.010	6.010	6.010	6.010	6.010	16h

数据表和文档

下载 Semikron SKM150GM12T4G 的数据表和制造商文档。

Newark

Datasheet5 页16 年前

Datasheet5 页9 年前

Datasheet5 页12 年前

iiiC

描述

由其分销商提供的 Semikron SKM150GM12T4G 的描述。

Insulated Gate Bipolar Transistor, 229A I(C), 1200V V(BR)CES, N-Channel

Semicontronic

Transistor; Transistor Type:IGBT Module;; Transistor; Transistor Type:IGBT Module; DC Collector Current:229A; Collector Emitter Voltage Vces:1.2kV; Collector Emitter Voltage V(br)ceo:940mV; No. of Pins:7; Package / Case:SEMITRANS 3

element14 APAC

Transistor; Corriente De Colector Dc:229A; Tensión De Saturación Colector-Emisor Vce(On):1.2Kv; Disipación De Potencia Pd:-; Tensión Colector Emisor V(Br)Ceo:940Mv; Núm. De Contactos:7; Temperatura De Trabajo Máx.:175°C |Semikron SKM150GM12T4G

Newark

Features: IGBT4 = 4. Generation Fast Trench IGBT (Infineon) CAL4 = Soft switching 4. Generation CAL-Diode Isolated copper baseplate using DBC Technology (Direct Copper Bonding) UL recognized, file no. E63532 Increased power cycling capability With integrated Gate resistor For higher switching frequenzies up to 20kHz Typical Applications: Matrix Inverter Bidirectional switch

Semikron