描述
由其分销商提供的 Semikron SK35GD126ET 的描述。
IGBT module [Semikron] SK35GD126ET IGBT module
IGBT MODULE, 1200V, 6 PACK; Transistor Polarity:N Channel; DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):2.1V; Power Dissipation Pd:1.05kW; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Ca
Features: Compact design One screw mounting Heat transfer and isolation through direct copper bonded aluminium oxide ceramic (DCB) Ultrafast NPT technology IGBT CAL technology FWD Integrated NTC temperature sensor Typical Applications: Inverter
Igbt Module, Six, 1.2Kv, 40A; Continuous Collector Current:40A; Collector Emitter Saturation Voltage:2.1V; Power Dissipation:1.05Kw; Operating Temperature Max:150°C; Igbt Termination:Press Fit; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SK 35 GD 126 ET
制造商别名
Semikron 在全球拥有多个品牌，分销商可将其用作替代名称。Semikron 也可称为以下名称：
- SEMIK
- SEMIKRON INTERNATIONAL
- SEMIKRO
- SEMIKRON INC
- semokron
- SEMIKR
- SEMIKON
- SEMIKROM
- SMIKRON
- SEMIKRON DANFOSS
- SEMIKRON INTERNATIONAL GMBH
- SEMIKEON
- Semikron Sindopower
- Sindopower / Semikron
- Semikron Danfoss Elektronik
- semicron
- SMK
- SMK CORP
- Semikron Passive
- SEMIKRON/PRIMO
- Mikron Manufacturing
技术规格
Physical
Case/PackageT
MountScrew, Through Hole
Number of Pins36
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)1.2 kV
Max Operating Temperature150 °C
Max Power Dissipation1.05 kW
Min Operating Temperature-40 °C
Rise Time30 ns
Dimensions
Height11.9888 mm
Length54.991 mm