价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Esaler Electronic | CIH10T1N8SNC | 132 | 4d | |||||||||
| Worldway Electronics | CIH10T1N8SNC | 31,984 | 7 | Tape & Reel | 17h | |||||||
| Win Source | WS-CIH10T1N8SNC | 20 | 1 | 18h | ||||||||
| Suntronic | CIH10T1N8SNC | 2,200 | 20h | |||||||||
| QUARKTWIN TECHNOLOGY LTD | CIH10T1N8SNC | 联系方式 | >1wk |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8504.50.80.00
Introduction Date2009-04-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
描述
由其分销商提供的 Samsung Electro-Mechanics CIH10T1N8SNC 的描述。
Ind High Frequency Chip Multi-Layer 1.8nH 0.3nH 100MHz 8Q-Factor Ceramic 800mA 0603 Paper T/R
General Purpose Inductor, 0.0018uH, 16.667%, 1 Element, Ceramic-Core, SMD, 0603
FIXED IND 1.8NH 800MA 100MOHM SM / 1.8 nH Unshielded Multilayer Inductor 800 mA 100mOhm Max 0603 (1608 Metric)
FIXED IND 1.8NH 800MA 100 MOHM
FIXED IND 1.8NH 800MA 100MOHM SM
800mA 1.8nH 100m惟 0603 Inductors (SMD) ROHS
CIH10T 1,8nH 800mA +-0,3nH MLT
制造商别名
Samsung Electro-Mechanics 在全球拥有多个品牌，分销商可将其用作替代名称。Samsung Electro-Mechanics 也可称为以下名称：
- Samsung Electro-Mechanics America Inc
- SAMSUNG ELECTRO-MECH
- SAMSUNG EM
- SAMSUNG PASSIVE
- SAMSUNG ELECTRO
- SAMSUNGEM
- Samsung Electronics Co Ltd
- Samsung Electro-Mechanics America
- SAMSUNG ELECT
- SAMSUNG ELECTRONICS
- SAMSUNG ELECTRO-MECHANIC
- SEMCO - SAMSUNG ELECTRO MECHAN
- Samsung Electro-Mechanics GmbH
- SAMSUNG ELECTRO-MECHNICS
- SAMSUNG ELECTRONICS AMERICA
- SAMSUNG (Samsung Electro-
- SAMSUNG ELECTRONICS CO
- SAMSUNG ELECTRO-ME
- SAMSUNGEM (Other)
- Semco - Samsung Electro M
- Samsung Electronics Company Limited
- ELECTRO MECHANICS
- Samsung Electro-Mechanics Electro-Mechanics
- MURATA/SAMSUNG ELECTRO-ME
- SMSNG-ELEC
- Samsung Electro-Mechanics America-Inc
技术规格
Physical
Case/Package0603
Core MaterialCeramic
MountSurface Mount
Number of Terminals2
Technical
Current Rating800 mA
DC Current800 mA
DC Resistance (DCR)100 mΩ
Inductance1.8 nH
Max Current Rating800 mA
Max DC Current800 mA
Max Operating Temperature125 °C
Military StandardNot
Min Operating Temperature-55 °C
Number of Circuits1
Q Factor8
Self Resonant Frequency6 GHz
ShieldingUnshielded
Test Frequency100 MHz
Tolerance16.667 %
Dimensions
Depth950 µm
Height800 µm
Length1.6 mm
Width800 µm